2SK3566(STA4,Q,M) Toshiba
2SK3566(STA4,Q,M)
Manufacturer Part Number
2SK3566(STA4,Q,M)
Description
MOSFET N-Ch 900V 2.5A Rdson 6.4 Ohm
Manufacturer
Toshiba
Specifications of 2SK3566(STA4,Q,M)
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
2.5 A
Resistance Drain-source Rds (on)
5.6 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
30 ns
Forward Transconductance Gfs (max / Min)
2 S
Gate Charge Qg
12 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
40 W
Rise Time
20 ns
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