DMN3730U-7 Diodes Inc., DMN3730U-7 Datasheet - Page 2

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DMN3730U-7

Manufacturer Part Number
DMN3730U-7
Description
MOSFET MOSFET BVDSS
Manufacturer
Diodes Inc.
Datasheet

Specifications of DMN3730U-7

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.94 A
Resistance Drain-source Rds (on)
460 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Fall Time
13 ns
Forward Transconductance Gfs (max / Min)
40 mS
Gate Charge Qg
1.6 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
0.45 W
Rise Time
2.8 ns
Typical Turn-off Delay Time
38 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN3730U-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
DMN3730U-7
Quantity:
5 000
Company:
Part Number:
DMN3730U-7
Quantity:
13 430
Thermal Characteristics
Maximum Ratings
Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 6)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
100
90
80
70
60
50
40
30
20
10
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
6. Device mounted on minimum recommended pad layout test board, 10
0
0.001 0.01
Fig. 1 Single Maximum Power Dissipation
T1, PULSE DURATION SECTION (sec)
Characteristic
Characteristic
0.1
@T
A
Steady
State
= 25°C unless otherwise specified
1
@T
A
= 25°C unless otherwise specified
T
T
T
10
A
A
A
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Single Pulse
Rthja = 176C/W
Rthja(t) = Rthja*r(t)
T - T = P*Rthja (t)
J
= 25°C (Note 5)
= 85°C (Note 5)
= 25°C (Note 4)
A
100
1000
www.diodes.com
2 of 7
μ
s pulse duty cycle = 1%.
Symbol
Symbol
T
J
V
V
R
,
I
P
DSS
GSS
I
DM
T
θJA
D
D
STG
0.001
0.01
100
0.1
10
1
0.01
R
Limited
DS(ON)
T , (Max) = 150°C
T = 25°C
Single Pulse
J
A
Diodes Incorporated
V , DRAIN-SOURCE VOLTAGE
Fig. 2 SOA, Safe Operation Area
A Product Line of
I (A) @
P
D
DS
0.1
-55 to +150
W
= 100ms
Value
Value
0.94
0.68
0.75
0.45
0.71
275
177
30
±8
10
I (A) @
P
I (A) @ DC
D
D
W
= 10ms
1
I (A) @
P
D
W
= 1ms
I (A) @
P
D
W
= 1s
10
DMN3730U
© Diodes Incorporated
I (A) @
P
°C/W
°C/W
D
Unit
Unit
W
I (A) @
P
°C
W
W
D
V
V
A
A
= 100µs
W
= 10µs
July 2011
100

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