DMN3730U-7 Diodes Inc., DMN3730U-7 Datasheet - Page 4

• Manufacturer Part Number: DMN3730U-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMN3730U-7

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.94 A
• Resistance Drain-source Rds (on): 460 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Fall Time: 13 ns
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate Charge Qg: 1.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.45 W
• Rise Time: 2.8 ns
• Typical Turn-off Delay Time: 38 ns

DMN3730U
Datasheet number: DS35308 Rev. 2 - 2
2.0
1.5
1.0
0.5
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50 -25
0
0
Fig. 8 On-Resistance Variation with Temperature
V , DRAIN-SOURCE VOLTAGE (V)
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
DS
V
Fig. 4 Typical Output Characteristic
0.4
T , AMBIENT TEMPERATURE (°C)
GS
1
Fig. 6 Typical On-Resistance
V
A
GS
V
= 2.0V
GS
V
0
GS
= 2.5V
V
= 3.0V
GS
= 4.5V
= 10V
0.8
25
2
V
GS
50
= 1.8V
1.2
V
I = 1.0A
3
GS
D
75
= 4.5V
V
V
V
GS
GS
GS
100
= 1.5V
= 2.5V
= 4.5V
V
I = 500mA
1.6
D
GS
4
= 2.5V
125 150
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2
5
4 of 7
0.8
0.6
0.4
0.2
2.0
1.5
1.0
0.5
0.8
0.6
0.4
0.2
0
0
0
-50 -25
0
0
Fig. 9 On-Resistance Variation with Temperature
V
V
GS
DS
0.25
T = 125°C
0.5
V
Fig. 5 Typical Transfer Characteristic
T , AMBIENT TEMPERATURE (°C)
A
= 4.5V
vs. Drain Current and Temperature
= 5V
Diodes Incorporated
GS
I = 500mA
A
V
D
T = 150°C
GS
A
, GATE-SOURCE VOLTAGE (V)
Fig. 7 Typical On-Resistance
0
A Product Line of
= 2.5V
I , DRAIN CURRENT (A)
D
0.5
V
1
I = 1.0A
GS
D
25
= 4.5V
T = -55°C
A
0.75
1.5
50
T = 25°C
A
T = 85°C
A
75
2
1
100
T = 125°C
T = 85°C
T = 150°C
T = -55°C
A
T = 25°C
A
DMN3730U
A
A
A
1.25
2.5
© Diodes Incorporated
125 150
1.5
July 2011
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