PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 12

• Manufacturer Part Number: PSMN013-100XS,127
• Description: MOSFET N-ch 100V 13mA MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.9 A
• Resistance Drain-source Rds (on): 10.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48.4 W
• Factory Pack Quantity: 50

NXP Semiconductors
9. Revision history
Table 8.
PSMN013-100XS
Product data sheet
Document ID
PSMN013-100XS v.2
Modifications:
PSMN013-100XS v.1
Revision history
20120306
20111213
Release date
•
•
Status changed from preliminary to product.
Various changes to content.
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 2 — 6 March 2012
Change notice
-
-
PSMN013-100XS
Supersedes
PSMN013-100XS v.1
-
© NXP B.V. 2012. All rights reserved.
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