PSMN013-100XS,127 NXP Semiconductors, PSMN013-100XS,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN013-100XS,127
• Description: MOSFET N-ch 100V 13mA MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN013-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.9 A
• Resistance Drain-source Rds (on): 10.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 48.4 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN013-100XS
Product data sheet
Table 7.
Symbol
Source-drain diode
V
t
Q
rr
Fig 6.
Fig 8.
SD
r
(A)
(S)
g
I
D
100
fs
120
100
80
60
40
20
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics; drain current as a
Forward transconductance as a function of
0
0
Characteristics
V
GS
Parameter
source-drain voltage
reverse recovery time
recovered charge
(V) = 10
20
1
…continued
6.0
40
2
5.5
60
3
Conditions
I
see
I
V
N-channel 100V 13 mΩ standard level MOSFET in TO220F (SOT186A)
All information provided in this document is subject to legal disclaimers.
S
S
003aag606
003aag608
DS
V
I
= 10 A; V
= 10 A; dI
DS
D
(A)
Figure 18
= 50 V
(V)
5.0
4.8
4.6
4.4
4.2
80
4
Rev. 2 — 6 March 2012
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 7.
Fig 9.
j
= 25 °C;
R
(m Ω )
DSon
(A)
I
D
25
20
15
10
80
60
40
20
5
0
0
of gate-source voltage; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Transfer characteristics; drain current as a
GS
4
0
= 0 V;
8
PSMN013-100XS
2
T
j
Min
-
-
-
= 175 ° C
12
4
Typ
0.8
52
109
16
© NXP B.V. 2012. All rights reserved.
V
T
003aag607
003aag610
V
j
GS
= 25 ° C
GS
(V)
Max
1.2
-
-
(V)
20
6
V
Unit
ns
nC
7 of 15