PSMN015-60BS,118 NXP Semiconductors, PSMN015-60BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN015-60BS,118
• Description: MOSFET N-CH 60 V 14.8 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN015-60BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 4 V
• Continuous Drain Current: 50 A
• Resistance Drain-source Rds (on): 23.7 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 86 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN015-60BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(m Ω )
V
(V)
DSon
GS
60
45
30
15
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
12 V
(V) = 4.5
15
V
DS
10
= 30 V
30
4.7
20
48 V
45
All information provided in this document is subject to legal disclaimers.
Q
003aae038
G
003aae037
I
D
(nC)
(A)
5.5
6.5
10
60
30
Rev. 2 — 1 March 2012
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
PSMN015-60BS
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2012. All rights reserved.
V
DS
003aaa508
003aae034
(V)
C
C
C
iss
oss
rss
10
2
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