FDB38N30U Fairchild Semiconductor, FDB38N30U Datasheet

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FDB38N30U

Manufacturer Part Number
FDB38N30U
Description
MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET 300V, 38A, 120m
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDB38N30U

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
38 A
Resistance Drain-source Rds (on)
0.103 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
62 ns
Forward Transconductance Gfs (max / Min)
30 S
Gate Charge Qg
56 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
313 W
Rise Time
80 ns
Typical Turn-off Delay Time
133 ns
©2012 Fairchild Semiconductor Corporation
FDB38N30U Rev. C0
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDB38N30U
N-Channel MOSFET, U-FRFET
300V, 38A, 0.12Ω
Features
• R
• Low gate charge ( Typ. 56nC )
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.103Ω ( Typ.) @ V
( Typ. 55pF )
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
GS
G
= 10V, I
S
D
T
= 19A
C
D
= 25
2
Parameter
Parameter
-PAK
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
D
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
22.8
31.3
62.5
300
±30
152
722
313
300
2.5
S
0.4
D
38
38
20
-
UniFET
www.fairchildsemi.com
October
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FDB38N30U Summary of contents

Page 1

... R Thermal Resistance, Case to Sink θCS R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FDB38N30U Rev. C0 Description = 19A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... G ≤ 38A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB38N30U Rev. C0 Package Reel Size D2-PAK 330mm unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... 1MHz C iss = shorted) C oss = rss = 0 Drain-Source Voltage [V] DS FDB38N30U Rev. C0 Figure 2. Transfer Characteristics 200 100 10 *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... R = 0.4 C/W θ Case Temperature [ C 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDB38N30U Rev. C0 (Continued) Figure 8. Maximum Safe Operating Area 300 100 10 1 *Notes 1mA D 0.1 80 120 160 o C] Figure 10. Unclamped Inductive 100 V = 10V 100 125 150 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDB38N30U Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB38N30U Rev. C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDB38N30U Rev PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB38N30U Rev. C0 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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