FDB38N30U Fairchild Semiconductor, FDB38N30U Datasheet - Page 3

• Manufacturer Part Number: FDB38N30U
• Description: MOSFET N-Channel UniFETTM Ultra FRFETTM MOSFET 300V, 38A, 120m
• Manufacturer: Fairchild Semiconductor

Specifications of FDB38N30U

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.103 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 62 ns
• Forward Transconductance Gfs (max / Min): 30 S
• Gate Charge Qg: 56 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 313 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 133 ns

FDB38N30U Rev. C0
Typical Performance Characteristics
10000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
1000
Figure 1. On-Region Characteristics
0.26
0.24
0.20
0.16
0.12
0.08
100
100
0.1
10
10
1
0.1
0.1
0
V
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
= 15.0V
10.0V
Drain Current and Gate Voltage
GS
8.0V
7.0V
6.5V
6.0V
5.5V
V
V
20
DS
DS
= 0V
, Drain-Source Voltage[V]
, Drain-Source Voltage [V]
I
D
, Drain Current [A]
40
1
1
V
GS
*Notes:
1. 250
2. T
60
= 10V
*Note: T
C
= 25
μ
s Pulse Test
V
o
GS
C
80
10
C
= 20V
C
C
C
= 25
10
oss
rss
iss
o
C
100
20
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
200
100
200
100
10
10
10
1
8
6
4
2
0
1
0.0
2
0
*Notes:
1. V
2. 250
3
V
DS
SD
10
Variation vs. Source Current
and Temperature
μ
, Body Diode Forward Voltage [V]
= 20V
s Pulse Test
V
0.4
Q
4
GS
150
g
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
20
o
C
150
V
V
V
5
DS
DS
DS
o
-55
= 60V
= 150V
= 240V
C
0.8
30
o
6
C
25
o
25
*Notes:
1. V
2. 250
C
7
*Note: I
40
o
C
GS
μ
1.2
= 0V
8
s Pulse Test
D
50
= 38A
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9
1.6
10
60