FCP600N60Z Fairchild Semiconductor, FCP600N60Z Datasheet

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FCP600N60Z

Manufacturer Part Number
FCP600N60Z
Description
MOSFET 600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FCP600N60Z

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
4.7 A
Resistance Drain-source Rds (on)
600 mOhms
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Fall Time
28 ns
Forward Transconductance Gfs (max / Min)
6.7 S
Gate Charge Qg
26 nC
Minimum Operating Temperature
-55 C
Power Dissipation
89 W
Rise Time
24 ns
Typical Turn-off Delay Time
88 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP600N60Z
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
FCP600N60Z / FCPF600N60Z
N-Channel SuperFET
600 V, 7.4 A, 600 mΩ
Features
• 650 V @T
• Max. R
• Ultra Low Gate Charge (Typ. Q
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
• ESD Improved Capacity
Applications
• LCD / LED / PDP TV and Monitor Lighting
• Solar Inverter
• AC-DC Power Supply
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
G D S
J
= 150°C
= 600 mΩ
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
MOSFET dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
g
= 20 nC)
®
T
oss
C
II MOSFET
= 25
.eff = 74 pF)
Parameter
Parameter
- DC
- AC
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
o
C unless otherwise noted
C
G
= 25
D
S
o
C)
C
C
1
= 25
= 100
o
SuperFET
eration of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resis-
tance and lower gate charge performance.This advanced tech-
nology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system minia-
turization and higher efficiency.
C
Description
o
TO-220F
C)
o
C)
®
II MOSFET is Fairchild Semiconductor
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
G
FCP600N60Z FCPF600N60Z
FCP600N60Z FCPF600N60Z
22.2
0.71
62.5
7.4
4.7
1.4
89
-55 to +150
D
D
S
S
0.89
600
±20
±30
135
100
300
1.5
20
March 2013
22.2*
62.5
0.22
7.4*
4.7*
4.5
28
www.fairchildsemi.com
®
’s first gen-
W/
o
Unit
V/ns
V/ns
Unit
C/W
mJ
mJ
o
o
W
V
V
V
A
A
A
C
C
o
C

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FCP600N60Z Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 ® II MOSFET Description ® SuperFET II MOSFET is Fairchild Semiconductor eration of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance ...

Page 2

... ≤ 3.7 A, di/dt ≤ 200 A/μs, V ≤ Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions mA, T ...

Page 3

... C iss = shorted) C oss = rss = C gd 0.5 0 Drain-Source Voltage [V] DS ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current Case Temperature [ C ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 (Continued) Figure 8. On-Resistance Variation *Notes 10mA D 80 120 160 o C] Figure 10. Maximum Safe Operating Area μ μ ...

Page 5

... Typical Performance Characteristics Figure 13. Transient Thermal Response Curve - FCP600N60Z 2 1 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse 0.1 0. Figure 14. Transient Thermal Response Curve - FCPF600N60Z 5 0.5 0.2 1 0.1 0.05 0.02 0.01 Single pulse 0 ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 (Continued) *Notes Rectangular Pulse Duration [sec] *Notes ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type ...

Page 8

... Mechanical Dimensions ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 TO-220AB 8 www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 TO-220F (Retractable) 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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