FCP600N60Z Fairchild Semiconductor, FCP600N60Z Datasheet - Page 5

• Manufacturer Part Number: FCP600N60Z
• Description: MOSFET 600V N-Channel MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FCP600N60Z

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Continuous Drain Current: 4.7 A
• Resistance Drain-source Rds (on): 600 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 28 ns
• Forward Transconductance Gfs (max / Min): 6.7 S
• Gate Charge Qg: 26 nC
• Minimum Operating Temperature: -55 C
• Power Dissipation: 89 W
• Rise Time: 24 ns
• Typical Turn-off Delay Time: 88 ns

©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Typical Performance Characteristics
Figure 14. Transient Thermal Response Curve - FCPF600N60Z
Figure 13. Transient Thermal Response Curve - FCP600N60Z
0.01
0.1
0.1
2
1
5
1
10
10
-5
-5
0.02
Single pulse
0.2
0.1
0.05
0.01
0.5
0.05
0.02
0.01
Single pulse
0.5
0.2
0.1
10
-4
10
-4
10
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
-3
(Continued)
10
-3
10
-2
5
10
10
-1
-2
*Notes:
*Notes:
1. Z
2. Duty Factor, D= t
3. T
1. Z
2. Duty Factor, D= t
3. T
P
P
10
DM
DM
θ
JM
θ
JM
JC
0
JC
- T
(t) = 4.5
(t) = 1.4
- T
10
C
C
= P
t
= P
t
-1
1
1
t
t
2
2
o
DM
10
o
DM
C/W Max.
C/W Max.
1
* Z
* Z
1
1
θ
/t
θ
/t
JC
JC
2
2
(t)
(t)
100
10
0
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