SIHG14N50D-E3 Vishay/Siliconix, SIHG14N50D-E3 Datasheet - Page 3

• Manufacturer Part Number: SIHG14N50D-E3
• Description: MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHG14N50D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 400 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Power Dissipation: 208 W

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-1229-Rev. A, 21-May-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
30
24
18
12
40
30
20
10
6
0
40
30
20
10
0
0
0
0
0
BOTYTOM 5.0 V
Fig. 3 - Typical Transfer Characteristics
TOP 15 V
TOP
T
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
J
= 150 °C
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
V
V
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5
5
V
DS
GS
DS
5
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
T
T
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
10
10
J
J
= 25 °C
= 25 °C
10
T
J
15
15
= 150 °C
15
5.0 V
5.0 V
20
20
For technical questions, contact:
20
25
25
30
30
25
3
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 4 - Normalized On-Resistance vs. Temperature
10 000
1000
100
2.5
1.5
0.5
10
24
20
16
12
8
4
0
3
2
0
1
1
- 60 - 40 - 20 0
0
0
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V
DS
100
T
10
C
I
Q
J
, Drain-to-Source Voltage (V)
D
, Junction Temperature (°C)
oss
C
g
= 7 A
rss
, Total Gate Charge (nC)
C
iss
20 40 60 80 100 120 140 160
200
20
V
C
C
C
GS
rss
oss
iss
= 0 V, f = 1 MHz
= C
= C
= C
300
gs
gd
V
ds
V
V
V
30
SiHG14N50D
GS
Vishay Siliconix
DS
DS
DS
+ C
Document Number: 91513
+ C
= 10 V
= 400 V
= 250 V
= 100 V
gd
gd
, C
400
40
ds
Shorted
500
50