SIHG14N50D-E3 Vishay/Siliconix, SIHG14N50D-E3 Datasheet - Page 4

• Manufacturer Part Number: SIHG14N50D-E3
• Description: MOSFET 500V 400mOhm@10V 14A N-Ch D-SRS
• Manufacturer: Vishay/Siliconix

Specifications of SIHG14N50D-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 14 A
• Resistance Drain-source Rds (on): 400 mOhms at 10 V
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Power Dissipation: 208 W

S12-1229-Rev. A, 21-May-12
Fig. 7 - Typical Source-Drain Diode Forward Voltage
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1000
100
0.1
10
1
1
Fig. 8 - Maximum Safe Operating Area
* V
100
T
T
Single Pulse
0.1
Operation in this Area
Limited by R
10
C
J
GS
1
= 150 °C
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= 25 °C
0.2
> minimum V
0.01
Limited by R
0.1
V
1
0.0001
T
DS
J
, Drain-to-Source Voltage (V)
0.4
= 150 °C
0.05
0.02
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Duty Cycle = 0.5
0.1
V
0.2
DS(on)
10
SD
Single Pulse
, Source-Drain Voltage (V)
0.6
GS
DS(on)
at which R
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
*
0.8
T
J
BVDSS Limited
I
DM
= 25 °C
100
= Limited
DS(on)
1
For technical questions, contact:
is s
0.001
1.2
V
GS
100 μs
1 ms
10 ms
1.4
1000
= 0 V
1.6
Pulse Time (s)
4
0.01
Fig. 10 - Typical Drain-to-Source Voltage vs. Temperature
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Fig. 9 - Maximum Drain Current vs. Case Temperature
625
600
575
550
525
500
475
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16
12
4
8
0
-
25
6
0
- 40 - 20
T
50
J
0.1
T
, Junction Temperature (°C)
J
, Case Temperature (°C)
0
20 40 60 80 100 120 140
75
SiHG14N50D
Vishay Siliconix
Document Number: 91513
100
125
1
150
1
6
0