PSMN9R5-100BS,118 NXP Semiconductors, PSMN9R5-100BS,118 Datasheet - Page 4

• Manufacturer Part Number: PSMN9R5-100BS,118
• Description: MOSFET N-CH 100 V 9.6 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN9R5-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 90 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 89 A
• Resistance Drain-source Rds (on): 9.6 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 211 W
• Factory Pack Quantity: 800

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN9R5-100BS
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10 −4
−1
−2
−3
1
10 −
Transient thermal impedance from junction to mounting base as a function of pulse duration
single shot
Thermal characteristics
6
δ = 0.5
0.1
0.05
0.02
0.2
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10 −
5
10 −
4
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 March 2012
Conditions
see
Minimum footprint; mounted on a
printed circuit board
10 −
N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK
3
Figure 4
10 −
2
10 −
PSMN9R5-100BS
1
Min
-
-
P
1
t
Typ
0.38
50
p
T
© NXP B.V. 2012. All rights reserved.
t
p
003aad142
(s)
δ =
Max
0.71
-
t
T
p
t
10
K/W
Unit
K/W
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