TK18A60V(S4V,Q) Toshiba
TK18A60V(S4V,Q)
Manufacturer Part Number
TK18A60V(S4V,Q)
Description
MOSFET N-CH 600V 18A 45W 0.19 OHM
Manufacturer
Toshiba
Specifications of TK18A60V(S4V,Q)
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Resistance Drain-source Rds (on)
190 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220SIS-3
Minimum Operating Temperature
- 55 C
Power Dissipation
45 W
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