3LP01S-K-TL-E ON Semiconductor, 3LP01S-K-TL-E Datasheet - Page 2

• Manufacturer Part Number: 3LP01S-K-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of 3LP01S-K-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 0.1 A
• Resistance Drain-source Rds (on): 10.4 Ohms
• Mounting Style: SMD/SMT
• Package / Case: SC-75
• Power Dissipation: 0.15 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
3LP01S-TL-E
P.G
--4V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --15V
D
S
I D = --50mA
R L =300Ω
3LP01S
V OUT
V (BR)DSS
I DSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
I GSS
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
SMCP
I D = --1mA, V GS =0V
V DS = --30V, V GS =0V
V GS =±8V, V DS =0V
V DS = --10V, I D = --100μA
V DS = --10V, I D = --50mA
I D = --50mA, V GS = --4V
I D = --30mA, V GS = --2.5V
I D = --1mA, V GS = --1.5V
V DS = --10V, f=1MHz
See specifi ed Test Circuit.
V DS = --10V, V GS = --10V, I D = --100mA
I S = --100mA, V GS =0V
3LP01S
Conditions
3,000pcs./reel
Shipping
min
--0.4
--30
80
Ratings
typ
Pb Free
--0.83
memo
1.43
0.18
0.25
120
130
110
7.5
5.7
1.8
11
27
24
55
8
max
--1.4
10.4
15.4
--1.2
±10
--1
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Unit
mS
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ω
Ω
Ω
V
V
V