3LP01S-K-TL-E ON Semiconductor, 3LP01S-K-TL-E Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/495/on_semiconductor_sml.jpg)
3LP01S-K-TL-E
Manufacturer Part Number
3LP01S-K-TL-E
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet
1.3LP01S-K-TL-E.pdf
(7 pages)
Specifications of 3LP01S-K-TL-E
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 0.1 A
Resistance Drain-source Rds (on)
10.4 Ohms
Mounting Style
SMD/SMT
Package / Case
SC-75
Power Dissipation
0.15 W
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
3LP01S-K-TL-E
Manufacturer:
SANYO
Quantity:
83 000
Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
3LP01S-TL-E
P.G
--4V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
G
50Ω
V DD = --15V
D
S
I D = --50mA
R L =300Ω
3LP01S
V OUT
V (BR)DSS
I DSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
I GSS
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
SMCP
I D = --1mA, V GS =0V
V DS = --30V, V GS =0V
V GS =±8V, V DS =0V
V DS = --10V, I D = --100μA
V DS = --10V, I D = --50mA
I D = --50mA, V GS = --4V
I D = --30mA, V GS = --2.5V
I D = --1mA, V GS = --1.5V
V DS = --10V, f=1MHz
See specifi ed Test Circuit.
V DS = --10V, V GS = --10V, I D = --100mA
I S = --100mA, V GS =0V
3LP01S
Conditions
3,000pcs./reel
Shipping
min
--0.4
--30
80
Ratings
typ
Pb Free
--0.83
memo
1.43
0.18
0.25
120
130
110
7.5
5.7
1.8
11
27
24
55
8
max
--1.4
10.4
15.4
--1.2
±10
--1
54
No.6681-2/7
Unit
mS
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ω
Ω
Ω
V
V
V