EMH2411R-TL-H ON Semiconductor, EMH2411R-TL-H Datasheet - Page 2

• Manufacturer Part Number: EMH2411R-TL-H
• Description: MOSFET NCH+NCH 2.5V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of EMH2411R-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 5 A
• Resistance Drain-source Rds (on): 36.5 mOhms
• Mounting Style: SMD/SMT
• Package / Case: EMH-8
• Power Dissipation: 1.4 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
EMH2411R-TL-H
P.G
4.5V
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
Rg=2kΩ
G
50Ω
Rg
V DD =10V
D
S
I D =3A
R L =3.33Ω
EMH2411R
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)4
R DS (on)5
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
Package
EMH8
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±8V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =2.5A, V GS =4.5V
I D =2.5A, V GS =4V
I D =1A, V GS =3.7V
I D =1A, V GS =3.1V
I D =1A, V GS =2.5V
See specifi ed Test Circuit.
V DS =10V, V GS =4.5V, I D =5A
I S =5A, V GS =0V
EMH2411R
Conditions
3,000pcs./reel
Shipping
min
19.5
22.5
Pb Free and Halogen Free
0.5
20
21
21
30
3
Ratings
typ
memo
3200
1650
300
840
5.9
1.2
0.8
28
29
30
33
38
5
1
max
36.5
46.5
±10
1.3
1.2
38
39
54
No. A1421-2/7
1
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
μA
μA
nC
nC
nC
ns
ns
ns
ns
S
V
V
V