EMH2411R-TL-H ON Semiconductor, EMH2411R-TL-H Datasheet - Page 3

• Manufacturer Part Number: EMH2411R-TL-H
• Description: MOSFET NCH+NCH 2.5V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of EMH2411R-TL-H

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 5 A
• Resistance Drain-source Rds (on): 36.5 mOhms
• Mounting Style: SMD/SMT
• Package / Case: EMH-8
• Power Dissipation: 1.4 W

10000
1000
100
100
1.0
0.1
2.0
1.5
1.0
0.5
10
90
80
70
60
50
40
30
20
10
0.01
0
0
7
5
3
2
7
5
3
2
7
7
5
3
2
7
5
3
2
0.1
0
0
I D =1.0A
V DS =10V
0.1
1
2
2
3
0.2
Drain-to-Source Voltage, V DS -- V
2
Gate-to-Source Voltage, V GS -- V
2.5A
5 7
3
0.3
3
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
0.1
SW Time -- I D
5
|
I D -- V DS
0.4
y
4
7
fs | -- I D
2
t d (on)
0.5
1.0
3
5
5 7
0.6
6
1.0
2
0.7
7
3
2
V GS =1.0V
0.8
8
V DD =10V
V GS =4.5V
3
Ta=25°C
5
1.5V
0.9
IT14427
IT14429
IT14423
IT14425
5 7
9
7
EMH2411R
1.0
10
10
10
0.001
0.01
1.0
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
70
60
50
40
30
20
10
5
4
3
2
1
0
0
--50
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
0
0
V DS =10V
V GS =0V
V DS =10V
I D =5A
0.1
0.2
1
0.2
0
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
0.4
Ambient Temperature, Ta -- ° C
Total Gate Charge, Qg -- nC
0.3
2
0.6
R DS (on) -- Ta
V GS -- Qg
I D -- V GS
I S -- V SD
0.4
50
3
0.8
0.5
1.0
4
100
0.6
1.2
0.7
5
No. A1421-3/7
1.4
150
0.8
6
1.6
0.9
IT14424
IT14426
IT14428
IT14430
200
1.8
1.0
7