CPH6341-M-TL-E ON Semiconductor, CPH6341-M-TL-E Datasheet - Page 2

• Manufacturer Part Number: CPH6341-M-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of CPH6341-M-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: - 5 A
• Resistance Drain-source Rds (on): 59 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SC-74
• Power Dissipation: 1.6 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
CPH6341-TL-E
--10V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
50Ω
G
V DD = --15V
D
S
I D = --3A
R L =5Ω
CPH6341
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
V OUT
CPH6
I D =- -1mA, V GS =0V
V DS =- -30V, V GS =0V
V GS =±16V, V DS =0V
V DS =- -10V, I D =- -1mA
V DS =- -10V, I D =- -3A
I D =- -3A, V GS =- -10V
I D =- -1.5A, V GS =- -4.5V
I D =- -1.5 A, V GS =- -4V
V DS =--10V, f=1MHz
See specifi ed Test Circuit.
V DS =--15V, V GS =--10V, I D =--5A
I S =--5A, V GS =0V
CPH6341
Conditions
3,000pcs./reel
Shipping
min
--1.2
--30
2.8
Ratings
typ
Pb Free
--0.87
memo
430
105
4.8
7.5
2.0
2.5
75
26
45
35
10
45
71
82
max
--2.6
--1.2
±10
100
115
--1
59
No. A1084-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V