SCH1331-S-TL-H ON Semiconductor, SCH1331-S-TL-H Datasheet - Page 2

• Manufacturer Part Number: SCH1331-S-TL-H
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of SCH1331-S-TL-H

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Continuous Drain Current: - 3 A
• Resistance Drain-source Rds (on): 84 mOhms
• Mounting Style: SMD/SMT
• Package / Case: SOT-563
• Power Dissipation: 1 W

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Ordering Information
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
SCH1331-TL-H
--4.5V
P.G
0V
PW=10μs
D.C.≤1%
V IN
Device
Parameter
V IN
50Ω
G
V DD = --6V
D
S
I D = --1.5A
R L =4Ω
SCH1331
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
Package
V OUT
SCH6
I D =--1mA, V GS =0V
V DS =--12V, V GS =0V
V GS =±8V, V DS =0V
V DS =--6V, I D =--1mA
V DS =--6V, I D =--1.5A
I D =--1.5A, V GS =--4.5V
I D =--0.8A, V GS =--2.5V
I D =--0.3A, V GS =--1.8V
V DS =--6V, f=1MHz
See specifi ed Test Circuit.
V DS =--6V, V GS =--4.5V, I D =--2.5A
I S =--2.5A, V GS =0V
SCH1331
Conditions
5,000pcs./reel
Shipping
min
--0.4
Pb Free and Halogen Free
--12
2.7
Ratings
typ
--0.82
memo
405
145
100
135
4.5
8.8
5.6
0.7
1.6
64
90
80
41
50
max
--1.3
--1.2
--10
±10
126
230
84
No. A1530-2/7
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V