PMN35EN,115 NXP Semiconductors, PMN35EN,115 Datasheet
PMN35EN,115
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PMN35EN,115 Summary of contents
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PMN35EN 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 — 20 July 2011 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ...
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... NXP Semiconductors 3. Ordering information Table 3. Ordering information Type number Package Name PMN35EN TSOP6 4. Marking Table 4. Marking codes Type number PMN35EN 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V gate-source voltage ...
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... NXP Semiconductors 120 P der (%) −75 −25 25 Fig 1. Normalized total power dissipation as a function of junction temperature Limit DSon DS ( –1 10 –2 10 – single pulse DM ( 100 µ 100 ms p (5) DC ° ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter R thermal resistance th(j-a) from junction to ambient R thermal resistance th(j-sp) from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GSth voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance g forward fs transconductance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge ...
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... NXP Semiconductors 4 °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 100 R DSon (1) (2) (3) (mΩ ° ...
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... NXP Semiconductors ( (1) ( > I × DSon ( ° 150 °C j Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 3 V (1) GS(th) (V) 2 (2) 1 (3) 0 – 0.25 mA (1) maximum values (2) typical values (3) minimum values Fig 12 ...
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... NXP Semiconductors ( 5 Fig 14. Gate-source voltage as a function of gate charge; typical values ( 150 ° °C j Fig 16. Source current as a function of source-drain voltage; typical values PMN35EN Product data sheet ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition PMN35EN Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 PMN35EN 30 V, 5.1 A N-channel Trench MOSFET © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package (TSOP6); 6 leads y 6 pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 0.40 1.1 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 Fig 18. Package outline SOT457 (TSOP6) PMN35EN Product data sheet ...
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... NXP Semiconductors 10. Soldering 0.95 3.3 2.825 0.95 Fig 19. Reflow soldering footprint for SOT457 (TSOP6) 1.475 5.05 1.475 Fig 20. Wave soldering footprint for SOT457 (TSOP6) PMN35EN Product data sheet 3.45 1.95 0.45 (6×) 0.7 (6×) 0.8 (6×) 2.4 5.3 1.45 (6×) 2.85 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 PMN35EN ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date PMN35EN v.1 20110720 PMN35EN Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 July 2011 PMN35EN 30 V, 5.1 A N-channel Trench MOSFET ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 12 Legal information ...