ZXMP3F36N8TA Diodes Inc. / Zetex, ZXMP3F36N8TA Datasheet

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ZXMP3F36N8TA

Manufacturer Part Number
ZXMP3F36N8TA
Description
MOSFET 30V P-CHANNEL ENHANCEMENT MODE
Manufacturer
Diodes Inc. / Zetex
Datasheet

Specifications of ZXMP3F36N8TA

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.6 A
Resistance Drain-source Rds (on)
0.02 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
40 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.8 W
Rise Time
5 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
75 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMP3F36N8TA
Manufacturer:
ZETEX
Quantity:
20 000
ZXMP3F36N8
30V SO8 P-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state
resistance (R
Features
Applications
Ordering information
Device marking
ZXMP 3F36
Issue 1 - August 2008
© Diodes Incorporated 2008
Device
ZXMP3F36N8TA
V
Low on-resistance
SO8 package
Battery Protection
Battery disconnect
Power management functions
(BR)DSS
-30
(V)
DS(on)
0.028
0.020
) and yet maintain superior switching performance.
R
DS(on)
@
Reel size
@
(inches)
V
V
GS
7
GS
(Ω)
=-4.5V
=-10V
Tape width
(mm)
12
-12.6
I
D
(A)
1
Quantity
per reel
500
G
S
S
S
www.diodes.com
Top view
www.zetex.com
D
D
D
D

Related parts for ZXMP3F36N8TA

ZXMP3F36N8TA Summary of contents

Page 1

... Low on-resistance • SO8 package Applications Battery Protection • • Battery disconnect • Power management functions Ordering information Device Reel size (inches) ZXMP3F36N8TA 7 Device marking ZXMP 3F36 Issue 1 - August 2008 © Diodes Incorporated 2008 I (A) D =-10V -12.6 =-4.5V Tape width Quantity (mm) ...

Page 2

Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ (c) Pulsed Drain current Continuous Source current (Body diode) Pulsed Source current (Body diode) Power dissipation at T =25°C A Linear ...

Page 3

Thermal characteristics 100 R DS(on) Limited 100m 100ms 10ms 10m Single Pulse T =25°C 1m amb 100m 1 -V Drain-Source Voltage (V) DS Safe Operating Area 80 T =25°C amb D=0 ...

Page 4

Electrical characteristics (at T Parameter Symbol Static Drain-Source breakdown V voltage Zero Gate voltage Drain I current I Gate-Body leakage Gate-Source threshold V voltage R Static Drain-Source ( ) * on-state resistance g Forward ( ) (†) * Transconductance (†) ...

Page 5

Typical characteristics 10V 3. 0.1 0. 25°C 1E-3 0.1 -V Drain-Source Voltage (V) DS Output Characteristics V = 10V 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 10 ...

Page 6

Typical characteristics 3000 2500 C ISS 2000 C OSS 1500 1000 500 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test circuits Issue 1 - August 2008 © Diodes Incorporated 2008 ...

Page 7

Package outline SO8 SO8 Package Information DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters ...

Page 8

Definitions Product change Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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