ZXMP3F36N8TA Diodes Inc. / Zetex, ZXMP3F36N8TA Datasheet - Page 5

• Manufacturer Part Number: ZXMP3F36N8TA
• Description: MOSFET 30V P-CHANNEL ENHANCEMENT MODE
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMP3F36N8TA

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.6 A
• Resistance Drain-source Rds (on): 0.02 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.8 W
• Rise Time: 5 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 75 ns

Typical characteristics
Issue 1 - August 2008
© Diodes Incorporated 2008
1E-3
0.01
0.01
Typical Transfer Characteristics
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
1
1
1
0.1
T = 25°C
V
0.1
DS
-V
-V
= 10V
DS
T = 150°C
GS
Output Characteristics
10V
-I
Drain-Source Voltage (V)
Gate-Source Voltage (V)
D
2
Drain Current (A)
1
3.5V
T = 25°C
1
T = 25°C
2.5V
10
3.5V
10
3V
4.5V
3V
10V
2.5V
2V
V
V
GS
GS
3
5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.1
0.2
-V
-V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
10V
0.4
3.5V
T = 150°C
1
V
I
50
D
GS
= 10A
V
I
0.6
D
GS
= 10V
= 250uA
ZXMP3F36N8
= V
T = 25°C
DS
www.diodes.com
100
www.zetex.com
Vgs = 0V
0.8
10
3V
R
V
2.5V
DS(on)
GS(th)
2V
V
GS
150
1.0