ECH8651R-TL-HX ON Semiconductor, ECH8651R-TL-HX Datasheet

no-image

ECH8651R-TL-HX

Manufacturer Part Number
ECH8651R-TL-HX
Description
MOSFET NCH+NCH 2.5V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of ECH8651R-TL-HX

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
24 V
Continuous Drain Current
10 A
Resistance Drain-source Rds (on)
14 mOhms
Mounting Style
SMD/SMT
Package / Case
ECH-8
Power Dissipation
1.4 W
Ordering number : ENA1010A
ECH8651R
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ.)
7011A-003
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
1
Parameter
8
0.65
Bottom View
Top View
2.9
5
4
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
Symbol
0 to 0.02
ECH8651R-TL-H
http://semicon.sanyo.com/en/network
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
ECH8651R
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
50112 TKIM/40908PE TIIM TC-00001313
8
1
2
×0.8mm) 1unit
7
2
TL
2
×0.8mm)
DATA SHEET
6
3
5
4
: ECH8
: -
Ratings
--55 to +150
Marking
±12
150
1.4
1.5
24
10
60
No. A1010-1/7
WV
Lot No.
Unit
°C
°C
W
W
A
A
V
V

Related parts for ECH8651R-TL-HX

ECH8651R-TL-HX Summary of contents

Page 1

... When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel ECH8651R-TL-H Packing Type : 0.02 Electrical Connection http://semicon.sanyo.com/en/network DATA SHEET Ratings 24 ±12 ...

Page 2

... R L =2Ω D PW=10μs D.C.≤ ECH8651R P.G 50Ω =1kΩ Ordering Information Device ECH8651R-TL-H ECH8651R Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on =5A ...

Page 3

... Diode Forward Voltage 4 =10V I D =10A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 Total Gate Charge ECH8651R =2. =1V 0 0.4 0.5 0 IT13148 =10V 1.0 150 200 0.1 IT13150 1000 1000 7 ...

Page 4

... 1.8 When mounted on ceramic substrate ✕0.8mm) 2 (900mm 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature ° C ECH8651R 120 140 160 IT13154 No. A1010-4/7 ...

Page 5

... Embossed Taping Specifi cation ECH8651R-TL-H ECH8651R No. A1010-5/7 ...

Page 6

... Outline Drawing ECH8651R-TL-H ECH8651R Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1010-6/7 ...

Page 7

... Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

Related keywords