ECH8651R-TL-HX ON Semiconductor, ECH8651R-TL-HX Datasheet - Page 3

• Manufacturer Part Number: ECH8651R-TL-HX
• Description: MOSFET NCH+NCH 2.5V DRIVE SERIES
• Manufacturer: ON Semiconductor

Specifications of ECH8651R-TL-HX

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 24 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 14 mOhms
• Mounting Style: SMD/SMT
• Package / Case: ECH-8
• Power Dissipation: 1.4 W

0.001
0.01
1.0
0.1
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
10
30
25
20
15
10
9
8
7
6
5
4
3
2
1
0
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
--50
0.1
0
0
V GS =0V
V DS =10V
I D =10A
0.2
5
0.1
Drain-to-Source Voltage, V DS -- V
0
Diode Forward Voltage, V SD -- V
Ambient Temperature, Ta -- ° C
0.3
Total Gate Charge, Qg -- nC
10
R DS (on) -- Ta
0.4
V GS -- Qg
I D -- V DS
I S -- V SD
0.2
50
0.5
15
100
0.3
0.6
20
0.7
V GS =1V
150
0.4
25
0.8
IT13148
IT13150
IT13152
IT13296
ECH8651R
200
0.5
0.9
30
1000
1000
0.01
100
100
1.0
1.0
0.1
10
10
40
35
30
25
20
15
10
0.01
5
0
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0.1
0
I D =2.5A
V DS =10V
Ta=25 ° C
Single pulse
When mounted on ceramic substrate
(900mm
Operation in this
area is limited by R DS (on).
2 3
2
2
2
5 7
✕0.8mm) 1unit
2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
3
3
0.1
5.0A
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
SW Time -- I D
5
5
2
|
y
4
3
7
7
fs | -- I D
A S O
5 7
1.0
1.0
1.0
6
2
2
2
3
5 7
3
3
No. A1010-3/7
PW ≤ 10 μs
8
10
V DD =10V
V GS =4V
Ta=25 ° C
5
5
2
IT13149
IT13151
IT13295
IT13390
7
7
3
10
10
10
5