AUIRF7759L2TR1 International Rectifier, AUIRF7759L2TR1 Datasheet - Page 2

• Manufacturer Part Number: AUIRF7759L2TR1
• Description: MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
• Manufacturer: International Rectifier

Specifications of AUIRF7759L2TR1

• Rohs: yes
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Power Dissipation: 125 W
• Factory Pack Quantity: 1000

Notes  through Š are on page 10
ƒ Surface mounted on 1 in. square Cu
BV
ΔΒV
R
V
ΔV
gfs
I
I
Q
Q
Q
R
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
Static Characteristics @ T
Dynamic Characteristics @ T
Diode Characteristics @ T
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
(still air).
DS(on)
G
iss
oss
rss
oss
oss
g
Q
Q
Q
Q
sw
oss
rr
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/ΔT
/ΔT
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
J
J
gs2
= 25°C (unless otherwise stated)
= 25°C (unless otherwise stated)
J
+ Q
= 25°C (unless otherwise stated)
gd
)
‰
clip heatsink (still air)
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
–––
75
74
12222
1465
7457
0.02
–––
–––
–––
–––
–––
–––
200
609
955
–––
–––
–––
150
-11
1.8
3.0
1.1
with small
37
11
62
91
73
60
18
37
80
33
64
-100
–––
–––
–––
–––
250
100
300
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
640
225
2.3
4.0
1.3
20
93
96
mV/°C
V/°C
mΩ
μA
nA
nC
nC
nC
pF
ns
ns
board with metalized back and with small
clip heatsink (still air)
V
V
S
Ω
A
V
‰ Mounted on minimum footprint full size
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig. 9
V
V
I
R
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/μs
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DS
DD
GS
DS
GS
GS
G
= 96A
= 96A
=1.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= V
= 25V, I
= 75V, V
= 60V, V
= 20V
= -20V
= 38V
= 10V
= 16V, V
= 38V, V
= 0V
= 25V
= 0V, V
= 0V, V
GS
, I
D
Conditions
Conditions
S
F
D
DS
DS
D
D
= 250μA
GS
GS
GS
GS
= 96A, V
= 96A, V
= 250μA
= 96A
= 96A
= 1.0V, f=1.0MHz
= 60V, f=1.0MHz
= 0V
= 0V, T
= 0V
= 10V
i
D
i
www.irf.com
DD
GS
= 2mA
J
i
= 125°C
= 38V
= 0V
i