AUIRF7759L2TR1 International Rectifier, AUIRF7759L2TR1 Datasheet - Page 7

• Manufacturer Part Number: AUIRF7759L2TR1
• Description: MOSFET Automotive 75V 160A 2.3mOhm DirectFET 2
• Manufacturer: International Rectifier

Specifications of AUIRF7759L2TR1

• Rohs: yes
• Drain-source Breakdown Voltage: 75 V
• Continuous Drain Current: 160 A
• Resistance Drain-source Rds (on): 1.8 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Power Dissipation: 125 W
• Factory Pack Quantity: 1000

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Fig 17. Maximum Avalanche Energy vs. Temperature
0
300
250
200
150
100
Fig 18a. Unclamped Inductive Test Circuit
Fig 19a. Gate Charge Test Circuit
50
0
Fig 20a. Switching Time Test Circuit
25
Starting T J , Junction Temperature (°C)
R G
20K
20V
V
1K
V DS
50
GS
t p
TOP
BOTTOM 1.0% Duty Cycle
I D = 96A
I AS
75
D.U.T
0.01 Ω
L
≤ 0.1 %
≤ 1
S
100
DUT
Single Pulse
125
15V
L
DRIVER
+
- V DD
150
A
+
-
VCC
175
Notes on Repetitive Avalanche Curves , Figures 14, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for
6. I
7. ΔT
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
every part type.
not exceeded.
avalanche pulse.
voltage increase during avalanche).
T
t
D = Duty cycle in avalanche = t
Z
Figures 18a, 18b.
av
av =
Fig 18b. Unclamped Inductive Waveforms
thJC
D (ave)
jmax
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed
Id
(assumed as 25°C in Figure 15, 16).
Fig 19b. Gate Charge Waveform
= Average power dissipation per single
I
Fig 20b. Switching Time Waveforms
AS
Vgs
av
P
) = Transient thermal resistance, see figure 11)
V
90%
10%
V
D (ave)
DS
GS
= 1/2 ( 1.3·BV·I
I
E
av
t
d(on)
AS (AR)
= 2DT/ [1.3·BV·Z
Qgodr
t p
t
r
= P
D (ave)
jmax
av
av
. This is validated for
·f
) = DT/ Z
·t
V
Qgd
th
av
(BR)DSS
]
t
d(off)
thJC
Qgs2
t
Vgs(th)
f
Vds
Qgs1
jmax
is
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