PSMN017-30EL,127 NXP Semiconductors, PSMN017-30EL,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN017-30EL,127
• Description: MOSFET N-chan 30 V 17 mohm MOSFET in I2PAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-30EL,127

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 32 A
• Resistance Drain-source Rds (on): 17 mOhms
• Mounting Style: Through Hole
• Package / Case: I2PAK
• Power Dissipation: 47 W
• Factory Pack Quantity: 50

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN017-30EL
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
δ = 0.5
0.1
0.05
single shot
Thermal characteristics
0.2
0.02
-6
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 2 — 3 April 2012
10
-3
N-channel 30 V 17 mΩ logic level MOSFET in I2PAK
Conditions
see
Figure 4
10
-2
PSMN017-30EL
Min
-
-
10
P
-1
t
Typ
3.18
60
p
T
© NXP B.V. 2012. All rights reserved.
t
p
003aaj593
(s)
δ =
Max
3.2
-
T
t
p
t
1
Unit
K/W
K/W
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