FDMS86540_F142 Fairchild Semiconductor, FDMS86540_F142 Datasheet - Page 3

• Manufacturer Part Number: FDMS86540_F142
• Description: MOSFET 60V N-Chan PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86540_F142

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 3.4 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 96 W

©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Typical Characteristics
120
120
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
Figure 1.
0
0
-75
Figure 5. Transfer Characteristics
2
0
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
DS
-50
I
V
D
vs Junction Temperature
GS
V
= 5 V
V
= 20 A
V
GS
GS
= 10 V
DS
T
V
3
1
-25
= 10 V
= 8 V
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
J
GS
,
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
0
T
J
4
= 150
2
25
μ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
o
C
50
T
J
5
3
= 25 °C unless otherwise noted
75
T
J
o
100 125 150
= -55
C )
T
V
J
6
4
GS
= 25
V
V
GS
GS
o
= 5.5 V
C
μ
o
= 5 V
= 6 V
s
C
7
5
3
0.001
0.01
200
100
0.1
10
15
12
8
6
4
2
0
Figure 2.
Figure 4.
1
9
6
3
0
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
V
SD
= 5 V
T
0.2
= 0 V
J
5
, BODY DIODE FORWARD VOLTAGE (V)
= 150
Normalized On-Resistance
V
On-Resistance vs Gate to
GS
30
I
Source Voltage
D
Source to Drain Diode
,
,
V
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
o
GS
I
C
0.4
D
6
= 20 A
= 5.5 V
0.6
60
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
0.8
V
J
T
GS
= 25
J
8
T
= -55
J
= 6 V
= 25
90
o
C
T
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o
V
V
J
1.0
C
GS
GS
o
= 125
C
9
= 10 V
= 8 V
μ
o
μ
s
C
s
1.2
120
10