FDMS86540_F142 Fairchild Semiconductor, FDMS86540_F142 Datasheet - Page 4

• Manufacturer Part Number: FDMS86540_F142
• Description: MOSFET 60V N-Chan PwrTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS86540_F142

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 20 A
• Resistance Drain-source Rds (on): 3.4 mOhms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 96 W

©2011 Fairchild Semiconductor Corporation
FDMS86540 Rev. C
Typical Characteristics
0.01
100
200
100
0.1
10
10
10
Figure 7.
8
6
4
2
0
1
1
0.01
0.01
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11.
I
D
= 20 A
10
V
Switching Capability
DS
0.1
Gate Charge Characteristics
0.1
SINGLE PULSE
T
R
T
t
J
A
θ
, DRAIN to SOURCE VOLTAGE (V)
AV
Operating Area
JA
Unclamped Inductive
= MAX RATED
= 25
20
, TIME IN AVALANCHE (ms)
DS(on)
Q
= 125
g
, GATE CHARGE (nC)
Forward Bias Safe
o
C
o
V
30
C/W
DD
1
1
T
= 20 V
J
T
= 125
J
40
= 25
T
V
DD
J
= 25 °C unless otherwise noted
o
o
= 30 V
C
C
10
10
50
T
J
= 100
V
DD
60
o
= 40 V
C
1 ms
10 ms
100 ms
1 s
10 s
DC
100 300
100 300
70
4
10000
1000
1000
140
120
100
100
100
0.5
80
60
40
20
10
Figure 10.
10
0
1
0.1
10
25
Figure 12. Single Pulse Maximum
-3
f = 1 MHz
V
Limited by Package
Figure 8.
GS
Current vs Case Temperature
= 0 V
10
V
50
-2
DS
V
Maximum Continuous Drain
Power Dissipation
to Source Voltage
GS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
Capacitance vs Drain
= 8 V
,
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
10
1
-1
75
V
GS
= 10 V
1
100
10
SINGLE PULSE
R
T
10
R
A
θ
o
θ
JA
C )
JC
= 25
125
= 125
www.fairchildsemi.com
= 1.3
C
100
C
C
o
oss
C
rss
iss
o
o
C/W
C/W
1000
150
60