SiHG30N60E-E3 Vishay/Siliconix, SiHG30N60E-E3 Datasheet - Page 3
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SiHG30N60E-E3
Manufacturer Part Number
SiHG30N60E-E3
Description
MOSFET N-Channel 600V
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHG30N60E-GE3.pdf
(8 pages)
Specifications of SiHG30N60E-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AC-3
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
85 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
S12-3103-Rev. E, 24-Dec-12
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 2 - Typical Output Characteristics, T
80
70
60
50
40
30
20
10
50
40
30
20
10
0
0
Fig. 1 - Typical Output Characteristics, T
0
0
www.vishay.com
5
5
V
V
DS
DS
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
10
10
T
J
= 25 °C
15
15
T
J
= 150 °C
20
20
For technical questions, contact:
BOTTOM 5.0 V
TOP
TOP
BOTTOM 5.0 V
C
= 150 °C
25
25
5 V
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
C
15 V
14 V
13 V
12 V
11 V
10 V
9.0 V
8.0 V
7.0 V
6.0 V
= 25 °C
30
30
3
hvm@vishay.com
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
Fig. 4 - Normalized On-Resistance vs. Temperature
80
60
20
0
www.vishay.com/doc?91000
- 60 - 40 - 20
0
Fig. 3 - Typical Transfer Characteristics
T
J
= 25 °C
5
V
T
GS
J
0
V
I
D
- Junction Temperature (°C)
, Gate-to-Source Voltage (V)
GS
= 15 A
= 10 V
20
10
40
T
J
Vishay Siliconix
60
SiHG30N60E
= 150 °C
Document Number: 91455
15
80 100 120 140 160
20
25