SiHG30N60E-E3 Vishay/Siliconix, SiHG30N60E-E3 Datasheet - Page 5
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SiHG30N60E-E3
Manufacturer Part Number
SiHG30N60E-E3
Description
MOSFET N-Channel 600V
Manufacturer
Vishay/Siliconix
Datasheet
1.SIHG30N60E-GE3.pdf
(8 pages)
Specifications of SiHG30N60E-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
29 A
Resistance Drain-source Rds (on)
125 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-247AC-3
Forward Transconductance Gfs (max / Min)
5.4 S
Gate Charge Qg
85 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
S12-3103-Rev. E, 24-Dec-12
Vary t
required I
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
p
0.01
Fig. 14 - Unclamped Inductive Test Circuit
0.1
to obtain
0.0001
1
90 %
10 %
AS
V
Fig. 12 - Switching Time Test Circuit
V
Fig. 13 - Switching Time Waveforms
DS
GS
R
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
10 V
www.vishay.com
G
G
0.2
0.1
Single Pulse
Duty Cycle = 0.5
0.05
0.02
10 V
V
t
GS
d(on)
V
DS
V
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
t
DS
p
t
r
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
I
AS
D.U.T
D.U.T.
0.01 Ω
L
R
D
t
0.001
d(off)
For technical questions, contact:
t
f
+
-
V
DD
+
-
V
Square Wave Pulse Duration (s)
DD
5
0.01
hvm@vishay.com
Fig. 15 - Unclamped Inductive Waveforms
10 V
www.vishay.com/doc?91000
V
Fig. 16 - Basic Gate Charge Waveform
I
AS
12 V
V
DS
V
G
Fig. 17 - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
0.1
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
t
GD
p
G
I
G
Vishay Siliconix
SiHG30N60E
Document Number: 91455
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS
1