SI3443DV-T1-E3 Vishay/Siliconix, SI3443DV-T1-E3 Datasheet
SI3443DV-T1-E3
Specifications of SI3443DV-T1-E3
Available stocks
Related parts for SI3443DV-T1-E3
SI3443DV-T1-E3 Summary of contents
Page 1
N-Channel 2.5-V (G-S) MOSFET V ( DS(on 0.095 @ TSOP-6 Top View 2.85 mm ...
Page 2
Si3442DV Vishay Siliconix Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward ...
Page 3
Output Characteristics 4. – Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 0.14 0. ...
Page 4
Si3442DV Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.25 0.50 0.75 1.00 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.2 0.1 –0 250 A D –0.1 –0.2 ...
Page 5
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...