SI3443DV-T1-E3 Vishay/Siliconix, SI3443DV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3443DV-T1-E3
• Description: MOSFET 20V 4.4A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI3443DV-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4 A
• Resistance Drain-source Rds (on): 0.065 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SuperSOT-6
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 32 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 57 ns
• Part # Aliases: SI3443DV-E3

Si3442DV
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-4
20
10
–0.0
–0.1
–0.2
–0.3
–0.4
1
0.2
0.1
0.01
0.1
–50
0
2
1
10
Source-Drain Diode Forward Voltage
–4
–25
Duty Cycle = 0.5
0.05
0.02
0.2
0.1
0.25
T
V
J
SD
= 150 C
0
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.50
J
– Temperature ( C)
25
10
0.75
50
–3
Single Pulse
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
T
= 250 A
75
J
1.00
= 25 C
100
1.25
125
10
–2
Square Wave Pulse Duration (sec)
1.50
150
10
–1
0.20
0.16
0.12
0.08
0.04
20
16
12
0.01
0
8
4
0
0
On-Resistance vs. Gate-to-Source Voltage
V
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
GS
P
1
DM
2
0.10
JM
– Gate-to-Source Voltage (V)
Single Pulse Power
– T
t
A
1
= P
Time (sec)
t
2
DM
I
D
Z
= 4 A
4
thJA
thJA
1.00
t
t
1
2
S-49525—Rev. C, 06-Oct-97
(t)
Document Number: 70192
= 62.5 C/W
10
6
10.00
30
8