VP2206N3-P003-G Supertex, VP2206N3-P003-G Datasheet

VP2206N3-P003-G

Manufacturer Part Number

VP2206N3-P003-G

Description

MOSFET 60V 0.9Ohm

Manufacturer

Supertex

Datasheet

1.VP2206N3-P003-G.pdf (6 pages)

Specifications of VP2206N3-P003-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 0.64 A

Resistance Drain-source Rds (on)

0.9 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

16 ns

Current page: 1 of 6
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Features

►

Applications

►

For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-39 package is RoHS compliant (‘Green’).

Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF52 for layout and dimensions.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Ordering Information

Product Summary

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

VP2206N3-G

VP2206

VP2206N2

Device

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

Device

memories, displays, bipolar transistors, etc.)

ISS

Supertex inc.

and fast switching speeds

VP2206N2

TO-39

DSS

-60

(V)

Package Options

/BV

DGS

VP2206N3-G

P-Channel Enhancement-Mode

Vertical DMOS FET

(max)

1235 Bordeaux Drive, Sunnyvale, CA 94089

0.9

DS(ON)

(Ω)

TO-92

-55

C to +150

(min)

-4.0

D(ON)

(A)

Value

±20V

DGS

DSS

(Die in wafer form)

General Description

The Supertex VP2206 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors, and the high input impedance

and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free from

thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low

input capacitance, and fast switching speeds are desired.

VP5206NW

Pin Configurations

Product Marking

Package may or may not include the following marks: Si or

SOURCE

TO-39 (N2)

Tel: 408-222-8888

Y Y W W

2 2 0 6

Wafer / Die Options

Si V P

(Die on adhesive tape)

GATE

YYWW

2206N2

DRAIN

VP5206NJ

YY = Year Sealed

WW = Week Sealed

TO-39 (N2)

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

www.supertex.com

SOURCE

TO-92 (N3)

(Die in waffle pack)

VP5206ND

VP2206

DRAIN

GATE

Related parts for VP2206N3-P003-G

VP2206N3-P003-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. NW TO-92 (Die in wafer form) VP2206N3-G VP5206NW Pin Configurations R I DS(ON) D(ON) ...

Page 2

... V Diode forward voltage drop SD t Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t d(ON) 0V OUTPUT 10% VDD Supertex inc Power Dissipation D D † (pulsed (A) (A) (W) -0.75 -8.0 6.0 -0.64 -4.0 1 ...

Page 3

... 1 -5.0 I (amperes) D Maximum Rated Safe Operating Area -10 TO-39 (pulsed) TO-92 (pulsed) TO-39 (DC) -1.0 TO-92 (DC) -0 -0.01 -1.0 -10 V (volts) DS Supertex inc -10V GS -8V -6V -4V -3V -30 - 125 -10 -100 -1000 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics - -10V GS -8 ...

Page 4

... Transfer Characteristics - -25V DS -8.0 -6.0 -4.0 -2 -2.0 -4.0 -6.0 V (volts) GS Capacitance vs. Drain-to-Source Voltage 400 300 200 100 0 0 -10 -20 V (volts) DS Supertex inc. (cont.) 5.0 4.0 3.0 2.0 1.0 0 100 150 1.2 1.1 1.0 0.9 0.8 0.7 -50 -8.0 -10 - 1.0MHz C -8.0 ISS -6.0 -4.0 -2.0 0 -30 -40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current V = -5. ...

Page 5

... Bottom View Symbol α MIN Dimension 45 O NOM (inches) NOM NOM MAX JEDEC Registration TO-39. * This dimension is not specified in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO39N2, Version B052009. Supertex inc. β β A Φa Φb .240 .190 .016 ...

Page 6

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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