VP2206N3-P003-G Supertex, VP2206N3-P003-G Datasheet - Page 4

• Manufacturer Part Number: VP2206N3-P003-G
• Description: MOSFET 60V 0.9Ohm
• Manufacturer: Supertex

Specifications of VP2206N3-P003-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.64 A
• Resistance Drain-source Rds (on): 0.9 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 16 ns

Typical Performance Curves
400
300
200
100
-8.0
-6.0
-4.0
-2.0
1.1
1.0
0.9
-10
Supertex inc.
Capacitance vs. Drain-to-Source Voltage
0
0
-50
0
0
V
BV
DS
= -25V
DSS
-2.0
Transfer Characteristics
Variation with Temperature
-10
0
-4.0
V
V
GS
DS
T
j
-20
(volts)
50
(
(volts)
O
C)
-6.0
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8.0
f = 1.0MHz
(cont.)
C
ISS
-10
-40
150
4
-8.0
-6.0
-4.0
-2.0
5.0
4.0
3.0
2.0
1.0
1.2
1.1
1.0
0.9
0.8
0.7
-10
0
0
-50
V
0
0
Gate Drive Dynamic Characteristics
(th)
On-Resistance vs. Drain Current
310 pF
and R
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V
-2.0
2.0
GS
0
= -5.0V
DS
Q
Variation with Temperature
G
V
(nanocoulombs)
DS
I
-4.0
D
4.0
= -10V
(amperes)
T
j
50
(
R
O
C)
DS(ON)
V
-6.0
6.0
(th)
@ -10V, -3.5A
@ -1.0mA
www.supertex.com
V
725 pF
DS
100
= -40V
V
-8.0
8.0
GS
= -10V
150
-10
10
2.0
1.6
1.2
0.8
0.4
0
VP2206