LP0701N3P002-G Supertex, LP0701N3P002-G Datasheet

LP0701N3P002-G

Manufacturer Part Number

LP0701N3P002-G

Description

MOSFET 16.5V 1.5Ohm

Manufacturer

Supertex

Datasheet

1.LP0701N3P002-G.pdf (6 pages)

Specifications of LP0701N3P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 16.5 V

Gate-source Breakdown Voltage

+/- 10 V

Continuous Drain Current

- 0.5 A

Resistance Drain-source Rds (on)

1.5 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

30 ns

Current page: 1 of 6
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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

LP0701

Device

Ultra-low threshold

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Freedom from secondary breakdown

Low input and output leakage

Logic level interfaces

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Supertex inc.

8-Lead SOIC (Narrow Body)

LP0701LG-G

Package Options

●

1235 Bordeaux Drive, Sunnyvale, CA 94089

P-Channel Enhancement-Mode

Lateral MOSFET

-55°C to +150°C

+300°C

Value

LP0701N3-G

±10V

DGS

DSS

TO-92

General Description

These enhancement-mode (normally-off) transistors utilize a

lateral MOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices

with the power handling capabilities of bipolar transistors

and with the high input impedance and negative temperature

coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, these devices are free

from thermal runaway and thermally induced secondary

breakdown. The low threshold voltage and low on-resistance

characteristics are ideally suited for hand held, battery

operated applications.

Pin Conﬁgurations

Product Marking

Package may or may not include the following marks: Si or

8-Lead SOIC (LG)

DSS

●

-16.5

0 7 0 1

Y Y W W

P0701

S i L P

(V)

Tel: 408-222-8888

/BV

YYWW

L L L L

DGS

8-Lead SOIC (LG)

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

YY = Year Sealed

WW = Week Sealed

L = Lot Number

1.5

DS(ON)

(Ω)

●

= “Green” Packaging

www.supertex.com

= “Green” Packaging

SOURCE

(max)

TO-92 (N3)

-1.0

GS(TH)

(V)

LP0701

DRAIN

GATE

-1.25

(min)

D(ON)

(A)

Related parts for LP0701N3P002-G

LP0701N3P002-G Summary of contents

Page 1

... P-Channel Enhancement-Mode Lateral MOSFET General Description These enhancement-mode (normally-off) transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefﬁ ...

Page 2

... V Diode forward voltage drop SD Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t (ON d(ON 90% OUTPUT 10% VDD Supertex inc. ● I Power Dissipation D ) † † (pulsed (A) (W) -1.25 1.5 ‡ -1.25 1 25°C unless otherwise speciﬁed) ...

Page 3

... Transconductance vs. Drain Current 1 -15V DS 0.8 0.6 0.4 0 -1.0 I (amperes) D Maximum Rated Safe Operating Area -10 TO-92/SO-8 (pulsed) -1.0 TO-92 (DC) SO-8 (DC) -0 -0.01 -0.1 -1.0 V (volts) DS Supertex inc. ● -5.0V GS -4V -3V -2V -1V - 125 -2.0 -10 -100 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 Saturation Characteristics -2 ...

Page 4

... Transfer Characteristics - -15V (volts) Capacitance vs. Drain-to-Source Voltage 200 100 (volts) DS Supertex inc. ● 100 150 1.4 1.2 1.0 0.8 0 1.0MHz - ISS C OSS - RSS 0 -10 -15 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs ...

Page 5

... Symbol A A1 MIN 1.35* 0.10 Dimension NOM - - (mm) MAX 1.75 0.25 JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005. * This dimension is not speciﬁed in the JEDEC drawing. Drawings are not to scale. Supertex Doc. #: DSPD-8SOLGTG, Version I041309. Supertex inc Note 1 Seating Plane 1.25 0.31 4.80* 5.80* 3.80* ...

Page 6

... This dimension is not speciﬁed in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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