BUK7635-55A /T3 NXP Semiconductors, BUK7635-55A /T3 Datasheet - Page 10

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BUK7635-55A /T3

Manufacturer Part Number
BUK7635-55A /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7635-55A /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Resistance Drain-source Rds (on)
0.035 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
20 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
85 W
Rise Time
62 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
24 ns
Part # Aliases
BUK7635-55A,118
NXP Semiconductors
8. Revision history
Table 7.
BUK7635-55A
Product data sheet
Document ID
BUK7635-55A v.2
Modifications:
BUK7535_7635_55A v.1
Revision history
Release date
20110127
20001110
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7635-55A separated from data sheet BUK7535_7635_55A v.1.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 27 January 2011
Data sheet status
Product data sheet
Product specification
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK7635-55A
Supersedes
BUK7535_7635_55A v.1
-
© NXP B.V. 2011. All rights reserved.
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