SST25VF016B-75-4I-S2AF Microchip Technology, SST25VF016B-75-4I-S2AF Datasheet - Page 23
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SST25VF016B-75-4I-S2AF
Manufacturer Part Number
SST25VF016B-75-4I-S2AF
Description
IC FLASH SER 16M 75MHZ SPI 8SOIC
Manufacturer
Microchip Technology
Specifications of SST25VF016B-75-4I-S2AF
Memory Type
FLASH
Memory Size
16M (2M x 8)
Format - Memory
FLASH
Speed
75MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Ic Interface Type
SPI
Clock Frequency
80MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SOIC
No. Of Pins
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
SHARP
Quantity:
1 200
Company:
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
SST/44
Quantity:
5 288
Company:
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
MICROCHIP
Quantity:
3 504
Part Number:
SST25VF016B-75-4I-S2AF
Manufacturer:
SST
Quantity:
20 000
Company:
Part Number:
SST25VF016B-75-4I-S2AF-T
Manufacturer:
Microchip Technology
Quantity:
1 650
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Table 10:DC Operating Characteristics
Table 11:Recommended System Power-up Timings
Table 12:Capacitance
Table 13:Reliability Characteristics
Symbol Parameter
I
I
I
I
I
I
I
V
V
V
V
V
Symbol
T
T
Parameter
C
C
Symbol
N
T
I
DDR
DDR2
DDR3
DDW
SB
LI
LO
LTH
PU-READ
PU-WRITE
DR
IL
IH
OL
OL2
OH
OUT
IN
END
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
1
1
1
parameter.
parameter.
parameter.
1
1
1
1
Read Current
Read Current
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Output High Voltage
Parameter
Endurance
Data Retention
Latch Up
Description
Output Pin Capacitance
Input Capacitance
Parameter
V
V
DD
DD
Min to Read Operation
Min to Write Operation
(T
A
= 25°C, f=1 Mhz, other pins open)
23
0.7 V
V
DD
Min
-0.2
DD
Minimum Specification
Limits
Max Units
0.8
0.2
0.4
10
15
20
30
20
1
1
100 + I
10,000
100
mA
mA
mA
mA
µA
µA
µA
16 Mbit SPI Serial Flash
V
V
V
V
V
DD
Test Conditions
CE#=0.1 V
CE#=0.1 V
CE#=0.1 V
CE#=V
CE#=V
V
V
V
V
I
I
I
OL
OL
OH
IN
OUT
DD
DD
Test Condition
=100 µA, V
=1.6 mA, V
=GND to V
=-100 µA, V
=V
=V
=GND to V
V
Minimum
V
OUT
DD
DD
DD
DD
IN
10
10
, V
Min
Max
= 0V
Cycles
Units
Years
DD
DD
DD
= 0V
mA
IN
/0.9 V
/0.9 V
/0.9 V
=V
DD
DD
DD
DD
DD
, V
=V
=V
DD
=V
SST25VF016B
, V
DD
DD
DD
DD
DD
DD
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
or V
DD
DD
@25 MHz, SO=open
@50 MHz, SO=open
@80 MHz, SO=open
=V
Min
Min
Min
=V
SS
DD
S71271-04-000
DD
Max
Maximum
Max
12 pF
Units
6 pF
Data Sheet
µs
µs
T10.0 1271
T12.0 1271
T13.0 1271
T11.0 1271
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