AT25DF161-SH-T Atmel, AT25DF161-SH-T Datasheet - Page 4

IC FLASH 16MBIT 100MHZ 8SOIC

AT25DF161-SH-T

Manufacturer Part Number
AT25DF161-SH-T
Description
IC FLASH 16MBIT 100MHZ 8SOIC
Manufacturer
Atmel
Datasheet

Specifications of AT25DF161-SH-T

Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
16M (2M x 8)
Speed
100MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Density
16Mb
Access Time (max)
5ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC EIAJ
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
2M
Supply Current
19mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AT25DF161-SH-T
Quantity:
12 000
3.
4.
4
Figure 2-1.
Block Diagram
Figure 3-1.
Memory Array
To provide the greatest flexibility, the memory array of the Atmel
including a full chip erase. In addition, the array has been divided into physical sectors of uniform size, of which each sector
can be individually protected from program and erase operations. The size of the physical sectors is optimized for both code
and data storage applications, allowing both code and data segments to reside in their own isolated regions. The Memory
Architecture Diagram illustrates the breakdown of each erase level as well as the breakdown of each physical sector.
SO (SOI)
SO (SOI)
Atmel AT25DF161
SI (SIO)
HOLD
GND
SCK
WP
CS
WP
CS
Top View
8-SOIC
1
2
3
4
Pin Configurations
Block Diagram
8
7
6
5
V
HOLD
SCK
SI (SIO)
CC
INTERFACE
CONTROL
LOGIC
AND
SO (SOI)
GND
WP
CS
Top View
8-UDFN
1
2
3
4
8
7
6
5
PROTECTION LOGIC
V
HOLD
SCK
SI (SIO)
CC
CONTROL AND
Y-DECODER
X-DECODER
®
AT25DF161 can be erased in four levels of granularity
AND LATCHES
I/O BUFFERS
MEMORY
Y-GATING
ARRAY
FLASH
DATA BUFFER
SRAM
3687E–DFLASH–11/10

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