SI4542DY-E3 Vishay/Siliconix, SI4542DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4542DY-E3
• Description: MOSFET 30V 6.9/6.1A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4542DY-E3

• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A, 6.1 A
• Resistance Drain-source Rds (on): 25 mOhms, 32 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 15 ns, 25 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 10 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 60 ns, 55 ns

Si4542DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
-
-
-
-
-
0.4
0.2
0.0
0.2
0.4
0.6
0.8
1.0
10
40
30
20
0.01
- 50
1
0.1
0.0
2
1
10 -
- 25
4
Source-Drain Diode Forward Voltage
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
J
V
= 150 °C
0
SD
0.4
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
Single Pulse
- Temperature (°C)
25
0.6
10 -
I
D
50
= 250 µA
3
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
T
J
1.0
= 25 °C
100
1.2
125
10 -
2
150
Square Wave Pulse Duration (s)
1.4
10 -
1
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 6.9 A
2
V
GS
1
0.10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
- Gate-to-Source Voltage (V)
P
DM
JM
4
- T
A
t
Time (s)
1
S09-0868-Rev. G, 18-May-09
= P
t
2
DM
Document Number: 70666
1.00
Z
thJA
6
thJA
t
t
1
2
(t)
10
Single Pulse
= 62.5 °C/W
T
C
= 25 °C
8
10.00
30
10