SI4542DY-E3 Vishay/Siliconix, SI4542DY-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4542DY-E3
• Description: MOSFET 30V 6.9/6.1A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4542DY-E3

• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.9 A, 6.1 A
• Resistance Drain-source Rds (on): 25 mOhms, 32 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 15 ns, 25 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2 W
• Rise Time: 10 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 60 ns, 55 ns

Si4542DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70666.
www.vishay.com
6
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
40
10
- 50
1
0.01
0.1
0
2
1
- 25
10 -
Source-Drain Diode Forward Voltage
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.3
0
V
I
SD
D
T
= 250 µA
Threshold Voltage
T
- Source-to-Drain Voltage (V)
J
25
J
- Temperature (°C)
= 150 °C
Single Pulse
0.6
50
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.9
T
J
100
= 25 °C
1.2
125
10 -
150
2
1.5
Square Wave Pulse Duration (s)
10 -
1
0.20
0.16
0.12
0.08
0.04
0.00
30
25
20
15
10
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
2
V
GS
0.10
- Gate-to-Source Voltage (V)
Single Pulse Power
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
4
JM
I
Time (s)
D
-
S09-0868-Rev. G, 18-May-09
= 6.1 A
T
t
1
A
= P
Document Number: 70666
1.00
t
2
DM
6
Z
thJA
thJA
t
t
1
2
(t)
10
= 62.5 °C/W
8
10.00
30
10