IPP04CNE8N G Infineon Technologies

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IPP04CNE8N G

Manufacturer Part Number

IPP04CNE8N G

Description

MOSFET N-CH 85V 100A 3.9mOhms

Manufacturer

Infineon Technologies

Specifications of IPP04CNE8N G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

85 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

0.0042 Ohms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220

Fall Time

25 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

300 W

Rise Time

78 ns

Typical Turn-off Delay Time

76 ns

Part # Aliases

IPP04CNE8NGXK

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