BUK9628-100A /T3 NXP Semiconductors, BUK9628-100A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9628-100A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9628-100A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 49 A
• Resistance Drain-source Rds (on): 0.027 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 106 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 166 W
• Rise Time: 58 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 250 ns
• Part # Aliases: BUK9628-100A,118

NXP Semiconductors
BUK9628-100A
Product data sheet
Fig 11. Forward transconductance as a function of
Fig 13. Gate-source threshold voltage as a function of
V
GS(th)
g
(S)
(V)
fs
100
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
-100
drain current; typical values
junction temperature
V
I
0
D
DS
= 1 mA; V
> I
D
20
x R
DSon
DS
0
= V
40
maximum
minimum
typical
GS
60
100
T
80
All information provided in this document is subject to legal disclaimers.
j
(°C)
003aaf228
003aaf230
I
D
(A)
100
200
Rev. 02 — 26 April 2011
Fig 12. Normalized drain-source on-state resistance
Fig 14. Sub-threshold drain current as a function of
(A)
I
a
D
10
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
-1
-2
-3
-4
-5
-6
-100
factor as a function of junction temperature
gate-source voltage
I
T
0
D
j
= 25 A; V
= 25 °C; V
N-channel TrenchMOS logic level FET
GS
DS
2 %
0
1
= 5 V
= V
BUK9628-100A
GS
typical
100
98 %
2
T
V
© NXP B.V. 2011. All rights reserved.
mb
GS
003aaf229
003aaf231
(°C)
(V)
200
3
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