TN2106N3-P003-G Supertex, TN2106N3-P003-G Datasheet - Page 2

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TN2106N3-P003-G

Manufacturer Part Number
TN2106N3-P003-G
Description
MOSFET 60V 2.5Ohm
Manufacturer
Supertex
Datasheet

Specifications of TN2106N3-P003-G

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.3 A
Resistance Drain-source Rds (on)
2.5 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
5 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.74 W
Rise Time
5 ns
Factory Pack Quantity
2000
Typical Turn-off Delay Time
6 ns
Thermal Characteristics
Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
† I
ΔV
R
BV
V
1.
2.
Sym
t
I
C
C
t
C
d(OFF)
I
I
G
V
TO-236AB (SOT-23)
D(ON)
DS(ON)
d(ON)
GS(th)
GSS
DSS
DS(ON)
t
OSS
RSS
t
D
GS(th)
t
ISS
SD
rr
DSS
FS
r
f
(continuous) is limited by max rated T
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
Package
TO-92
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Parameter
OUTPUT
INPUT
V
10V
0V
DD
0V
GS(th)
DS(ON)
10%
with temperature
with temperature
t
d(ON)
(continuous)
10%
t
(ON)
90%
(mA)
280
300
I
t
j
1235 Bordeaux Drive, Sunnyvale, CA 94089
r
D
.
O
(T
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
A
= 25
O
90%
t
C unless otherwise specified)
d(OFF)
t
(OFF)
(pulsed)
0.8
1.0
(A)
I
D
t
90%
F
10%
Power Dissipation
2
Min
150
0.6
0.6
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
@T
0.36
0.74
A
(W)
= 25
0.70
-3.8
Typ
400
400
0.1
7.0
3.0
5.0
6.0
5.0
1.2
35
17
GENERATOR
-
-
-
-
-
-
-
O
PULSE
C
Tel: 408-222-8888
INPUT
R
Max
-5.5
100
100
2.0
1.0
5.0
2.5
1.0
8.0
5.0
8.0
9.0
8.0
1.8
50
25
GEN
-
-
-
-
mV/
mmho V
Units
(
%/
O
200
125
C/W)
nA
µA
pF
θ
ns
ns
V
V
Ω
V
A
jc
O
O
C
C V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
Conditions
D
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
www.supertex.com
(
= 0.5A,
O
350
170
C/W)
θ
= 0V, I
= V
= V
= ± 20V, V
= 0V, V
= 0.8Max Rating,
= 0V, T
= 10V, V
= 4.5V, I
= 10V, I
= 10V, I
= 25V, I
= 0V,
= 25V,
= 25V,
= 0V, I
= 0V, I
ja
= 25Ω
V
DD
DS
DS
R
L
, I
, I
D.U.T.
D
SD
SD
A
D
D
DS
OUTPUT
D
D
D
= 1.0mA
= 125
D
= 1.0mA
= 1.0mA
DS
= 500mA
= 500mA
(mA)
= 500mA
280
300
= 500mA
= 500mA
= Max Rating
I
= 200mA
DR
DS
= 25V
= 0V
O
TN2106
C
I
0.8
1.0
(A)
DRM

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