TN2106N3-P014-G Supertex, TN2106N3-P014-G Datasheet

TN2106N3-P014-G

Manufacturer Part Number

TN2106N3-P014-G

Description

MOSFET 60V 2.5Ohm

Manufacturer

Supertex

Datasheet

1.TN2106N3-P013-G.pdf (6 pages)

Specifications of TN2106N3-P014-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

0.3 A

Resistance Drain-source Rds (on)

2.5 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Fall Time

5 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

0.74 W

Rise Time

5 ns

Factory Pack Quantity

2000

Typical Turn-off Delay Time

6 ns

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Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo-voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TN2106

Device

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Complementary N- and P-channel devices

ISS

and fast switching speeds

TO-236AB (SOT-23)

TN2106K1-G

Package Option

●

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

C to +150

300

TN2106N3-G

Value

±20V

DGS

DSS

TO-92

Pin Conﬁgurations

Product Marking

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

TO-236AB (SOT-23) (K1)

DRAIN

●

N1LW

2 1 0 6

Y Y W W

Tel: 408-222-8888

GATE

DSS

(V)

/BV

TO-236AB (SOT-23) (K1)

T N

SOURCE

DGS

W = Code for week sealed

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

= “Green” Packaging

●

= “Green” Packaging

www.supertex.com

(max)

DS(ON)

2.5

(Ω)

DRAIN

TO-92 (N3)

TN2106

SOURCE

(max)

GATE

2.0

GS(th)

(V)

Related parts for TN2106N3-P014-G

TN2106N3-P014-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TO-92 TN2106N3-G Pin Conﬁgurations DRAIN TO-236AB (SOT-23) (K1) Value BV ...

Page 2

... R = 25Ω GEN 5.0 8.0 1 PULSE GENERATOR R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com TN2106 I I † DR DRM (mA) (A) 280 0.8 300 1.0 = 1.0mA = 1.0mA = 1.0mA = Max Rating = 125 25V DS = 200mA D = 500mA D = 500mA D = 500mA D = 500mA ...

Page 3

... Saturation Characteristics 2.5 V 2.0 1.5 1.0 0 (volts) DS Power Dissipation vs. Temperature 1.0 0.8 TO-92 0.6 0.4 SOT-23 0 100 125 Thermal Response Characteristics 1.0 TO-236AB 0 0.36W 0.6 TO- 0.4 0.2 0 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TN2106 = GS 10V 150 10 ...

Page 4

... On-Resistance vs. Drain Current 4. 10V 0.5 1.0 1.5 2 (amperes) V and R Variation with Temperature DS(ON ) GS(th) 1 10V, 0.5A DS(ON) 1.0 0.8 0 1mA GS(th) 0.4 - 100 Gate Drive Dynamic Characteristics 10V 20V 0.6 0 0.2 0.4 0.8 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TN2106 2.5 2.0 1.6 1.2 0.8 0.4 0 150 1.0 ...

Page 5

... Top View Side View Symbol A A1 MIN 0.89 0.01 Dimension NOM - (mm) MAX 1.12 0.10 JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208 0.88 0.30 2.80 2.10 - 0.95 - 2.90 - 1.02 0.50 3.04 2.64 ● ...

Page 6

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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