SIA413DJ-T1-E3 Vishay/Siliconix, SIA413DJ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SIA413DJ-T1-E3
• Description: MOSFET 12V 12A 19W
• Manufacturer: Vishay/Siliconix

Specifications of SIA413DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 29 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 40 ns, 12 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 65 ns, 70 ns
• Part # Aliases: SIA413DJ-E3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 70447
S12-1141-Rev. D, 21-May-12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.08
0.07
0.06
0.05
0.04
0.03
0.02
40
32
24
16
8
0
8
6
4
2
0
0.0
On-Resistance vs. Drain Current and Gate Voltage
0
0
V
I
D
GS
= 10 A
0.5
= 1.8 V
8
8
V
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
1.0
V
- Total Gate Charge (nC)
I
DS
D
- Drain Current (A)
16
16
Gate Charge
= 6 V
1.5
For more information please contact:
24
24
V
V
GS
2.0
GS
= 2.5 V
V
DS
= 5 thru 2.5 V
V
GS
= 9.6 V
V
V
V
32
32
GS
GS
GS
2.5
= 4.5 V
This document is subject to change without notice.
= 1.5 V
= 2 V
= 1 V
3.0
40
40
[e-mail]
3000
2500
2000
1500
1000
500
1.2
1.1
1.0
0.9
0.8
10
8
6
4
2
0
0
- 50
0.0
0
I
D
On-Resistance vs. Junction Temperature
C
= 6.7 A
rss
- 25
C
0.3
iss
V
V
DS
Transfer Characteristics
3
T
GS
0
J
T
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
- Gate-to-Source Voltage (V)
oss
= 125 °C
Capacitance
25
0.6
T
C
V
= 25 °C
GS
50
6
= 4.5 V, 2.5 V
0.9
V
75
Vishay Siliconix
GS
www.vishay.com/doc?91000
= 4.5 V, 2.5 V
100
9
SiA413DJ
T
1.2
C
= - 55 °C
www.vishay.com
125
1.5
150
12
3