SIA413DJ-T1-E3 Vishay/Siliconix, SIA413DJ-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SIA413DJ-T1-E3
• Description: MOSFET 12V 12A 19W
• Manufacturer: Vishay/Siliconix

Specifications of SIA413DJ-T1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 29 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70-6L
• Fall Time: 40 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 40 ns, 12 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 65 ns, 70 ns
• Part # Aliases: SIA413DJ-E3

SiA413DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I
T
D
J
= 250 µA
25
- Temperature (°C)
T
J
= 150 °C
0.6
50
75
For more information please contact:
0.8
0.01
100
0.1
10
100
1
0.1
T
1.0
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
J
* V
= 25 °C
125
Single Pulse
Limited by R
T
GS
A
= 25 °C
1.2
150
minimum V
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
BVDSS Limited
GS
*
at which R
[e-mail]
10
0.060
0.048
0.036
0.024
0.012
DS(on)
30
25
20
15
10
5
0
0.001
100 µs
10 ms
1 s
10 s
1 ms
100 ms
DC
0
is specified
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power, Junction-to-Ambient
D
= 6.7 A
0.01
1
100
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
S12-1141-Rev. D, 21-May-12
3
10
Document Number: 70447
www.vishay.com/doc?91000
T
T
A
A
= 25 °C
= 125 °C
100
4
1000
5