VS-ST1280C06K0L Vishay Semiconductors, VS-ST1280C06K0L Datasheet - Page 2
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VS-ST1280C06K0L
Manufacturer Part Number
VS-ST1280C06K0L
Description
SCR Modules 2310 Amp 600 Volt 4150 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST1280C06K1.pdf
(8 pages)
Specifications of VS-ST1280C06K0L
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
4150 A
Non Repetitive On-state Current
42500 A
Breakover Current Ibo Max
44500 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
100 mA
On-state Voltage
1.44 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
200 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
A-24 (K-PUK)
Circuit Type
SCR
Current Rating
2310 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
2
ST1280C..K Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: ind-modules@vishay.com
SYMBOL
SYMBOL
SYMBOL
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM
T(AV)
DRM
TSM
Phase Control Thyristors
I
I
r
r
t
t
I
I
2
2
TM
t1
t2
H
d
q
L
(Hockey PUK Version),
t
√t
,
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
R
J
J
2310 A
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 8000 A, T
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
= 550 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage ≤ 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I < π x I
< I < π x I
g
J
J
maximum, dI/dt = 40 A/µs,
/dt = 1 A/µs
J
J
maximum, t
= 25 °C
maximum
maximum
RRM
RRM
r
≤ 1 µs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
p
), T
), T
= 10 ms sine pulse
applied
J
J
J
= T
= T
= T
DRM
J
J
J
DRM
maximum
maximum
maximum
p
= 500 µs
Document Number: 93718
2310 (885)
VALUES
VALUES
VALUES
Revision: 11-Aug-08
55 (85)
42 500
44 500
35 700
37 400
90 270
0.077
0.068
4150
9027
8241
6383
5828
1000
1000
0.83
0.90
1.44
600
200
500
100
1.9
UNITS
UNITS
kA
UNITS
kA
A/µs
V/µs
mΩ
mA
°C
mA
µs
A
A
V
V
2
2
√s
s