VS-VSKT230-12PBF Vishay Semiconductors, VS-VSKT230-12PBF Datasheet - Page 3

• Manufacturer Part Number: VS-VSKT230-12PBF
• Description: SCR Modules 1200volt 230amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKT230-12PBF

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 510 A
• Non Repetitive On-state Current: 7500 A
• Breakover Current Ibo Max: 7850 A
• Rated Repetitive Off-state Voltage Vdrm: 1.2 kV
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.59 V
• Holding Current (ih Max): 500 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 130 C
• Mounting Style: Chassis
• Package / Case: MAGN-A-PAK
• Circuit Type: SCR / SCR
• Current Rating: 230 A
• Minimum Operating Temperature: - 40 C

Note
• Table shows the increment of thermal resistance R
Document Number: 93053
Revision: 02-Jul-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.230-
0.009
180°
SINUSOIDAL CONDUCTION AT T
[e-mail], [e-mail],
MAP to heatsink
0.010
For technical questions within your region, please contact one of the following:
120°
busbar to MAP
(MAGN-A-PAK Power Modules), 230 A
0.010
90°
SYMBOL
SYMBOL
SCR/SCR and SCR/Diode
P
+ I
R
- V
R
dI/dt
P
T
V
V
I
G(AV)
I
thCS
T
thJC
GT
GD
GM
Stg
GD
0.020
GT
GM
J
thJC
GT
60°
J
MAXIMUM
when devices operate at different conduction angles than DC
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 h to allow for the spread of
the compound.
t
f = 50 Hz, T
t
t
T
T
T
T
T
T
T
T
T
rated V
p
p
p
J
J
J
J
J
J
J
J
J
0.032
≤ 5 ms, T
≤ 5 ms, T
≤ 5 ms, T
= - 40 °C
= 25 °C
= T
= - 40 °C
= 25 °C
= T
= T
= T
= T
30°
J
J
J
J
J
DRM
maximum, rated V
maximum, rated V
maximum, I
maximum
maximum
TEST CONDITIONS
TEST CONDITIONS
J
J
J
J
applied
= T
= T
= T
= T
0.007
RECTANGULAR CONDUCTION AT T
180°
J
J
J
J
maximum
maximum
maximum
maximum
TM
Anode supply = 12 V,
resistive load; Ra = 1 Ω
Anode supply = 12 V,
resistive load; Ra = 1 Ω
= 400 A,
[e-mail]
0.011
DRM
DRM
120°
applied
applied
VSK.230..PbF Series
0.015
Vishay Semiconductors
90°
- 40 to 130
- 40 to 150
VALUES
VALUES
0.020
0.125
4 to 6
60°
10.0
0.25
10.0
0.02
17.8
350
200
100
500
500
2.0
3.0
5.0
4.0
3.0
2.0
J
MAGN-A-PAK
MAXIMUM
0.033
30°
www.vishay.com
UNITS
UNITS
A/μs
K/W
Nm
mA
mA
oz.
°C
W
A
V
V
g
UNITS
K/W
3