VS-ST303C08LFL1 Vishay Semiconductors, VS-ST303C08LFL1 Datasheet - Page 6

• Manufacturer Part Number: VS-ST303C08LFL1
• Description: SCR Modules 515 Amp 800 Volt 995 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST303C08LFL1

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 1180 A
• Non Repetitive On-state Current: 7950 A
• Breakover Current Ibo Max: 8320 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 2.16 v
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (E-PUK)
• Circuit Type: SCR
• Current Rating: 620 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 3

ST303CPbF Series
Vishay High Power Products
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6
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
10 000
320
300
280
260
240
220
200
180
160
140
120
100
1000
80
1000
100
100
dI/dt - Rate of Fall of On-State Current (A/µs)
10
10
10
20
Snubber circuit
R
C
V
D
s
s
= 10 Ω
= 0.47 µF
= 80 % V
30
2500
3000
3000
I
I
I
I
I
2000
TM
TM
TM
TM
TM
Pulse Basewidth (µs)
Pulse Basewidth (µs)
1500
40
1000
2500
= 500 A
= 300 A
= 200 A
= 100 A
= 50 A
100
DRM
100
2000
500
50
1500
400
500
1000
t
60
p
t
p
ST303C..C Series
T
For technical questions, contact: [e-mail]
J
200
70
= 125 °C
ST303C..C Series
Sinusoidal pulse
T
1000
200
1000
C
400
ST303C..C Series
Trapezoidal pulse
T
dI/dt = 50 A/µs
Snubber circuit
R
C
V
C
= 40 °C
D
s
s
= 40 °C
80
= 10 Ω
= 0.47 µF
= 80 % V
100
100
Inverter Grade Thyristors
50 Hz
90
(PUK Version), 620 A
50 Hz
DRM
100
10 000
Fig. 13 - Frequency Characteristics
10 000
Fig. 14 - Frequency Characteristics
10 000
Fig. 12 - Reverse Recovered Current Characteristics
180
160
140
120
100
10 000
80
60
40
20
1000
1000
100
100
dI/dt - Rate of Fall of Forward Current (A/µs)
10
10
10
20
Snubber circuit
R
C
V
2500
D
s
s
= 10 Ω
= 0.47 µF
= 80 % V
2500
30
3000
3000
1000
2000
1500
I
I
I
I
I
TM
TM
TM
TM
TM
Pulse Basewidth (µs)
1500
Pulse Basewidth (µs)
40
= 500 A
= 300 A
= 200 A
= 100 A
= 50 A
100
400
DRM
2000
100
50
1000
500
200
t
60
p
500
t
Document Number: 94373
p
ST303C..C Series
T
200
J
= 125 °C
70
ST303C..C Series
Sinusoidal pulse
T
1000
400
1000
C
ST303C..C Series
Trapezoidal pulse
T
dI/dt = 50 A/µs
Snubber circuit
R
C
V
= 55 °C
C
s
s
D
Revision: 25-Jul-08
= 55 °C
80
= 10 Ω
= 0.47 µF
= 80 % V
50 Hz
100
100
50 Hz
90
DRM
100
10 000
10 000